Studen A, Burdette D, Chesi E, Cindro V, Clinthorne N H, Cochran E, Grosicar B, Kagan H, Lacasta C, Linhart V, Mikuz M, Stankova V, Weilhammer P, Zontar D
JoZef Stefan Institute, Ljubljana, Slovenia.
Radiat Prot Dosimetry. 2010 Apr-May;139(1-3):199-203. doi: 10.1093/rpd/ncq076. Epub 2010 Mar 9.
Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an (22)Na source, and a scintillator (LYSO)-PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron-hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns.
模拟表明,通过用靠近成像对象放置的探头升级传统环,可以改善正电子发射断层扫描(PET)图像。本文讨论了与使用高电阻率硅作为探测器材料的PET探头相关的定时问题。最终的探头将由几层(四到八层)1毫米厚的硅探测器组成,分割成1×1毫米²的焊盘,每个焊盘相当于一个独立的p+nn+二极管。通过良好的定时分辨率,可以实现硅中的事件与外环事件的适当匹配。为了评估定时性能,在一个简化的模型探头上进行了测量,该探头由一个1毫米厚的探测器和256个方形焊盘(边长1.4毫米)组成,并与两个专用集成电路VATAGP7耦合。探测器材料和电子设备与最终探头将使用的相同。该模型暴露于来自²²Na源的511keV湮灭光子,并且使用闪烁体(LYSO)-光电倍增管组件作为定时参考。将结果与模拟进行了比较,模拟包括四个部分:(i)GEANT4实现了对硅中湮灭光子相互作用激发的电子的真实跟踪,(ii)计算传感器中二次电离(电子-空穴对)的传播,(iii)估计表面电极上感应的电流脉冲的形状,以及(iv)模拟第一级电子设备。在模拟和测量之间发现了非常好的一致性。两者都表明最终探头在低至20ns的定时窗口下具有可靠的性能。