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动态无序有机半导体电荷迁移率的多尺度研究。

Multiscale study of charge mobility of organic semiconductor with dynamic disorders.

机构信息

Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, 100190 Beijing, P R China.

出版信息

Phys Chem Chem Phys. 2010 Apr 7;12(13):3309-14. doi: 10.1039/b913183c. Epub 2010 Feb 22.

Abstract

The impact of dynamic disorder arising from the thermal fluctuations on the charge transport in organic semiconductors is studied by a multi-scale approach combining molecular dynamics, electronic structure calculations and kinetic Monte Carlo simulations for pentacene crystal of thin-film phase. It is found that for 1-D arrays, such fluctuations severely reduce charge mobility as temperature increases. However, when going from an 1-D array to an 2-D herringbone layer, for a wide range of temperatures, the charge transport property is found to be unaffected by such disorders from our multiscale computational study. And in some extreme cases, when the fluctuations of the hopping integral are even larger than their average values, the dynamic disorders can increase the charge mobility. In addition, we point out that the "band-like" behavior concluded by the experiment can be reproduced by quantum charge transfer involving nuclear vibration tunneling effects within a hopping model.

摘要

通过分子动力学、电子结构计算和动力学蒙特卡罗模拟相结合的多尺度方法,研究了热涨落引起的动态无序对有机半导体电荷输运的影响。研究发现,对于一维阵列,随着温度的升高,这种涨落会严重降低电荷迁移率。然而,当从一维阵列转变为二维人字形层时,在很宽的温度范围内,电荷输运性质不受多尺度计算研究中这种无序的影响。在某些极端情况下,当跳跃积分的涨落甚至大于其平均值时,动态无序可以提高电荷迁移率。此外,我们指出,实验中得出的“能带状”行为可以通过包含跳跃模型中核振动隧道效应的量子电荷转移来再现。

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