Said R, Ghumman C A A, Teodoro M N D, Ahmed W, Abuazza A, Gracio J
School of Computing, Engineering and Physical Sciences, University of Central Lancashire, Preston PR1 2HE, UK.
J Nanosci Nanotechnol. 2010 Apr;10(4):2552-7. doi: 10.1166/jnn.2010.1454.
RF-PECVD was used to prepare amorphous of carbon (DLC) onto stainless steel 316 and glass substrates. The substrates were negatively biased at between 100 V to 400 V. Thin films of DLC have been deposited using C2H2 and titanium isopropoxide (TIPOT). Argon was used to generate the plasma in the PECVD system chamber. DEKTAK 8 surface stylus profilometer was used to measure the film thickness and the deposition rate was calculated. Micro Raman spectroscopy was employed to determine the chemical structure and bonding present in the films. Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) instrument. In addition, X-ray photoelectron spectroscopy (XPS) was used to analyze the composition and chemical state of the films. The wettability of the films was examined using the optical contact angle meter (CAM200) system. Two types of liquids with different polarities were used to study changes in the surface energy. The as-grown films were in the thickness range of 200-400 nm. Raman spectroscopy results showed that the I(D)/I(G) ratio decreased when the bias voltage on the stainless steel substrates was increased. This indicates an increase in the graphitic nature of the film deposited. In contrast, on the glass substrates the I(D)/I(G) ratio increased when the bias voltage was increased indicates a greater degree of diamond like character. Chemical composition determined using XPS showed the presence of carbon and oxygen in both samples on glass and stainless steel substrates. Both coatings the contact angle of the films decreased except for 400 V which showed a slight increase. The oxygen is thought to play an important role on the polar component of a-C.
采用射频等离子体增强化学气相沉积法（RF-PECVD）在316不锈钢和玻璃基板上制备非晶碳（DLC）。基板施加100 V至400 V的负偏压。使用C2H2和异丙醇钛（TIPOT）沉积DLC薄膜。在PECVD系统腔室中使用氩气产生等离子体。使用DEKTAK 8表面触针轮廓仪测量薄膜厚度并计算沉积速率。采用显微拉曼光谱法确定薄膜中的化学结构和键合。使用VGTOF SIMS（IX23LS）仪器对样品进行成分分析。此外，使用X射线光电子能谱（XPS）分析薄膜的成分和化学状态。使用光学接触角测量仪（CAM200）系统检测薄膜的润湿性。使用两种不同极性的液体研究表面能的变化。生长的薄膜厚度范围为200 - 400 nm。拉曼光谱结果表明，当不锈钢基板上的偏压增加时，I(D)/I(G)比值降低。这表明沉积薄膜的石墨化性质增加。相反，在玻璃基板上，当偏压增加时I(D)/I(G)比值增加，表明具有更高程度的类金刚石特性。使用XPS确定的化学成分表明，玻璃和不锈钢基板上的两个样品中均存在碳和氧。除了400 V时薄膜的接触角略有增加外，两种涂层的薄膜接触角均减小。氧被认为在非晶碳的极性成分中起重要作用。
