Department of Material Science and Engineering, University of Tennessee, Knoxville, USA.
Nanotechnology. 2010 Apr 30;21(17):175302. doi: 10.1088/0957-4484/21/17/175302. Epub 2010 Apr 1.
The details of a Monte Carlo helium ion beam induced deposition simulation are introduced and initial results for reaction rate and mass transport limited growth regimes are presented. Reaction rate limited growth leads to fast vertical growth from incident primary ions and minimal lateral broadening, whereas mass transport limited growth has lower vertical growth velocity and exhibits broadening due to scattered ions and secondary electrons. The results are compared to recent experiments and previous electron beam induced deposition simulations.
介绍了蒙特卡罗氦离子束诱导沉积模拟的细节，并给出了反应速率和质量传输限制生长阶段的初步结果。反应速率限制生长导致入射初级离子的快速垂直生长和最小的横向展宽，而质量传输限制生长具有较低的垂直生长速度，并由于散射离子和二次电子而表现出展宽。结果与最近的实验和以前的电子束诱导沉积模拟进行了比较。
