Suk Kyung-Suk, Jung Ha-Na, Woo Hee-Gweon, Park Don-Hee, Kim Do-Heyoung
Faculty of Applied Chemical Engineering, Center for Funtional Nano Fine Chemicals BK21 Program and Research Institute for Catalysis, Chonnam National University, 300 Yong Bong-Dong, Gwang-Ju 500-757, Korea.
J Nanosci Nanotechnol. 2010 May;10(5):3354-6. doi: 10.1166/jnn.2010.2308.
Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.
通过使用Ge{N(CH3)(C2H5)}、Sb(C3H7)3、Te(C3H7)3作为前驱体，在垂直流动反应器中采用循环脉冲等离子体增强化学气相沉积（PECVD）法，将Ge-Sb-Te（GST）薄膜沉积在TiN、SiO2和Si衬底上。等离子体活化的H2用作还原剂。生长行为强烈依赖于衬底类型。无论衬底温度如何，GST在TiN上都生长为连续薄膜。然而，在衬底温度≥200℃时，GST在Si和SiO2衬底上仅形成小的晶体聚集体，而非连续薄膜。研究了沉积温度对GST薄膜的表面形貌、粗糙度、电阻率、结晶度和成分的影响。
