通过等离子体增强原子层沉积法制备的GeSbTe薄膜的相变特性。

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon.

作者信息

Song Sannian, Yao Dongning, Song Zhitang, Gao Lina, Zhang Zhonghua, Li Le, Shen Lanlan, Wu Liangcai, Liu Bo, Cheng Yan, Feng Songlin

机构信息

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 China.

Division of Nuclear Materials Science and Engineering, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800 China.

出版信息

Nanoscale Res Lett. 2015 Feb 28;10:89. doi: 10.1186/s11671-015-0815-5. eCollection 2015.

DOI:10.1186/s11671-015-0815-5

PMID:25852385

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4385138/

Abstract

Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

摘要

相变随机存取存储器（PCM）似乎是下一代高密度非易失性存储器的最强有力候选者。超高密度PCM的制造在很大程度上依赖于用于相变硫族化物材料的薄膜生长技术。在本研究中，使用Ge[(CH3)2 N]4、Sb[(CH3)2 N]3、Te(C4H9)2作为前驱体，并以等离子体活化的H2气体作为金属有机前驱体的还原剂，通过等离子体增强原子层沉积（ALD）方法沉积了Ge2Sb2Te5（GST）和GeSb8Te薄膜。与基于GST的器件相比，基于GeSb8Te的器件表现出更快的开关速度和更低的复位电压，这归因于富Sb的GeSb8Te薄膜以生长为主导的结晶机制。这些结果表明，ALD是制备相变材料的一种有吸引力的方法。