Lee K H, Lee J Y, Kwon Y H, Ryu S Y, Kang T W, Yoo C H, Kim T W
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea.
J Nanosci Nanotechnol. 2010 May;10(5):3435-9. doi: 10.1166/jnn.2010.2327.
Scanning electron microscopy (SEM) images and transmission electron microscopy (TEM) images showed that the one-dimensional GaN nanorods were formed on Al2O3 (0001) substrates by using hydride vapor phase epitaxy without a catalyst. Selected area electron diffraction (SAED) pattern and high-resolution TEM (HRTEM) results showed that GaN nanorods grown on Al2O3 (0001) substrates had crystalline wurzite structures and (0001) preferential orientation. The morphologies of GaN nanorods were affected by the flow rates of the source materials. The orientational relationships between the GaN nanorods and the Al2O3 substrates were (0001)GaN perpendicular (0001) Al2O3 and [0110]GaN perpendicular [1120] Al2O3. Cross-sectional and plan-view atomic arrangements of the fully relaxed interfacial region are described on the basis of the TEM, the SAED pattern, and the HRTEM results.
扫描电子显微镜（SEM）图像和透射电子显微镜（TEM）图像表明，通过使用氢化物气相外延法在无催化剂的情况下，在Al2O3（0001）衬底上形成了一维氮化镓纳米棒。选区电子衍射（SAED）图案和高分辨率TEM（HRTEM）结果表明，生长在Al2O3（0001）衬底上的氮化镓纳米棒具有结晶纤锌矿结构和（0001）择优取向。氮化镓纳米棒的形态受源材料流速的影响。氮化镓纳米棒与Al2O3衬底之间的取向关系为（0001）GaN垂直于（0001）Al2O3以及[0110]GaN垂直于[1120]Al2O3。基于TEM、SAED图案和HRTEM结果描述了完全弛豫界面区域的横截面和平面视图原子排列。
