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硅平板波导中的亚波长光栅模式变换器

Sub-wavelength grating mode transformers in silicon slab waveguides.

作者信息

Bock Przemek J, Cheben Pavel, Schmid Jens H, Delâge André, Xu Dan-Xia, Janz Siegfried, Hall Trevor J

机构信息

Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Canada.

出版信息

Opt Express. 2009 Oct 12;17(21):19120-33. doi: 10.1364/OE.17.019120.

Abstract

We report on several new types of sub-wavelength grating (SWG) gradient index structures for efficient mode coupling in high index contrast slab waveguides. Using a SWG, an adiabatic transition is achieved at the interface between silicon-on-insulator waveguides of different geometries. The SWG transition region minimizes both fundamental mode mismatch loss and coupling to higher order modes. By creating the gradient effective index region in the direction of propagation, we demonstrate that efficient vertical mode transformation can be achieved between slab waveguides of different core thickness. The structures which we propose can be fabricated by a single etch step. Using 3D finite-difference time-domain simulations we study the loss, polarization dependence and the higher order mode excitation for two types (triangular and triangular-transverse) of SWG transition regions between silicon-on-insulator slab waveguides of different core thicknesses. We demonstrate two solutions to reduce the polarization dependent loss of these structures. Finally, we propose an implementation of SWG structures to reduce loss and higher order mode excitation between a slab waveguide and a phase array of an array waveguide grating (AWG). Compared to a conventional AWG, the loss is reduced from -1.4 dB to < -0.2 dB at the slab-array interface.

摘要

我们报道了几种新型的亚波长光栅(SWG)渐变折射率结构,用于在高折射率对比度平板波导中实现高效模式耦合。利用SWG,在不同几何形状的绝缘体上硅波导之间的界面处实现了绝热过渡。SWG过渡区域将基模失配损耗和高阶模耦合都降至最低。通过在传播方向上创建渐变有效折射率区域,我们证明了在不同芯厚的平板波导之间可以实现高效的垂直模式转换。我们提出的结构可以通过单次蚀刻步骤制造。利用三维时域有限差分模拟,我们研究了不同芯厚的绝缘体上硅平板波导之间两种类型(三角形和三角形横向)的SWG过渡区域的损耗、偏振依赖性和高阶模激发。我们展示了两种降低这些结构偏振相关损耗的解决方案。最后,我们提出了一种SWG结构的实施方案,以减少平板波导与阵列波导光栅(AWG)的相控阵之间的损耗和高阶模激发。与传统AWG相比,在平板-阵列界面处,损耗从-1.4 dB降低到了< -0.2 dB。

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