Turner-Foster Amy C, Foster Mark A, Levy Jacob S, Poitras Carl B, Salem Reza, Gaeta Alexander L, Lipson Michal
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Opt Express. 2010 Feb 15;18(4):3582-91. doi: 10.1364/OE.18.003582.
We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of the p-i-n structure does not measurably increase the propagation loss of the waveguide. We derive a figure of merit demonstrating equal dependency of the nonlinear phase shift on free-carrier lifetime and linear propagation loss.
我们通过在集成的p-i-n二极管上施加反向偏压，将硅纳米波导中的自由载流子寿命从3纳秒降低到了12.2皮秒。这一观测结果代表了迄今为止在硅波导中所展示的最短自由载流子寿命。重要的是，p-i-n结构的存在并未显著增加波导的传播损耗。我们推导出了一个品质因数，证明非线性相移对自由载流子寿命和线性传播损耗具有同等依赖性。
