Tada K, Kuhara Y, Tatsumi M, Yamaguchi T
Appl Opt. 1982 Aug 15;21(16):2953-9. doi: 10.1364/AO.21.002953.
A single-crystalline double-layered structure of a pure (80-microm)/doped (39-microm)/pure Bi(12)SiO(20) (BSO) substrate was grown for the first time by a new liquid-phase epitaxial growth to form an optical waveguide. The waveguide layer is BSO doped with CaCO(3) (0.1 wt. %) and Ga(2)O(3) (0.197 wt. %) and has a refractive index 0.07% higher than the substrate. The optical absorption coefficients were decreased by more than 1 order of magnitude by doping with the elements Ca and Ga. The high-sensitive photoconductivity of pure BSO was also reduced. Using these unique properties, we have constructed a new type of optically controlled planar optical switch.
首次通过一种新的液相外延生长方法生长出纯（80微米）/掺杂（39微米）/纯Bi(12)SiO(20)（BSO）衬底的单晶双层结构，以形成光波导。波导层是掺杂有CaCO(3)（0.1重量%）和Ga(2)O(3)（0.197重量%）的BSO，其折射率比衬底高0.07%。通过掺杂Ca和Ga元素，光吸收系数降低了一个多数量级。纯BSO的高灵敏度光电导率也降低了。利用这些独特性质，我们构建了一种新型的光控平面光开关。
