International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
ACS Nano. 2010 May 25;4(5):2515-22. doi: 10.1021/nn100483a.
The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memories have been attributed to repetitive formation and breakage of the conductive pathways inside a solid electrolyte. However, direct evidence of such pathway existence and their formations has never been provided. Herein, we reproduced the switching behavior of a Ag/Ag(2)S/W sandwich structure inside a high-resolution transmission electron microscope equipped with a scanning tunneling microscope unit. The on/off current ratio of 5 orders of magnitude was documented. The in situ formation and breakage of a nanoscale conductive channel were ultimately verified in real time and under atomic resolution. We found that a conducting Ag(2)S argentite phase and a Ag nanocrystal together formed the ionic and electronic conductive channel. The preferential atomic sites for Ag nanocrystal growth within the argentite phase were finally clarified.
基于离子/电子混合导体的固态电解质非易失性存储器的开关行为归因于在固态电解质内部反复形成和断裂导电通路。然而,从未提供过这种通路存在及其形成的直接证据。在此,我们在配备扫描隧道显微镜单元的高分辨率透射电子显微镜中再现了 Ag/Ag(2)S/W 夹层结构的开关行为。记录到 5 个数量级的通断电流比。最终在原子分辨率下实时验证了纳米级导电通道的原位形成和断裂。我们发现,一个导电的 Ag(2)S 银矿相和一个 Ag 纳米晶体共同形成了离子和电子导电通道。最终阐明了银矿相中 Ag 纳米晶体生长的优先原子位置。