Zhu Yuan, Liang Jia-Sheng, Mathayan Vairavel, Nyberg Tomas, Primetzhofer Daniel, Shi Xun, Zhang Zhen
Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala 75121, Sweden.
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
ACS Appl Mater Interfaces. 2022 May 11;14(18):21173-21180. doi: 10.1021/acsami.2c02264. Epub 2022 Apr 27.
Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile α-AgS films as both a flexible substrate and a functional electrolyte. The device accesses dense multiple-level nonvolatile states with a record high 10 ON/OFF ratio. This exceptional memristor performance is induced by sequential processes of Schottky barrier modification at the contact interface and filament formation inside the electrolyte. In addition, it is crucial to ensure that the cathode junction, where Ag is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.
柔性忆阻器在柔性电子应用方面极具潜力，但目前仍缺乏良好的电学性能和机械柔韧性。在此，我们展示了一种全无机纳米级柔性忆阻器，它使用自支撑的韧性α-AgS薄膜作为柔性衬底和功能电解质。该器件可实现密集的多级非易失性状态，具有创纪录的高达10的开/关比。这种卓越的忆阻器性能是由接触界面处肖特基势垒的改性以及电解质内部细丝形成的连续过程所引发的。此外，至关重要的是要确保阴极结（在此处Ag被还原为Ag）在细丝形成之前主导总电阻并承担大部分设置偏压。我们的研究全面深入地了解了导电桥接忆阻器中的电阻切换机制，并为高性能柔性忆阻器提供了一种新策略。
