Guo Hongxuan, Yao Jiahao, Chen Siyuan, Qian Chong, Pan Xiangyu, Yin Kuibo, Zhu Hao, Gao Xu, Wang Suidong, Sun Litao
School of Integrated Circuit, Southeast University, Nanjing 210096, China.
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.
Micromachines (Basel). 2024 Dec 16;15(12):1499. doi: 10.3390/mi15121499.
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al's and Au's top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the AlO film on the on/off window and voltage characteristics of the device were investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of AlN films, respectively. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and switching ratio.
具有宽带隙（约6.2电子伏特）的氮化铝（AlN）具有吸引人的特性，包括高导热性、高介电常数和良好的绝缘性能，适用于电阻式随机存取存储器领域。采用射频磁控溅射技术在ITO衬底上沉积AlN薄膜。在AlN薄膜上沉积Al和Au的顶部电极，制成Au/Al/AlN/ITO三明治结构忆阻器。研究了AlO膜对器件开/关窗口和电压特性的影响。分别改变溅射气氛中的沉积时间和氮含量，以调整AlN薄膜的厚度和成分。通过分析电阻开关特性、形成电压和开关比，研究了电阻开关的可能机制。
