Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0409, USA.
Nano Lett. 2010 Jun 9;10(6):2117-20. doi: 10.1021/nl1006432.
Nanowire photodetectors can perform exceptionally well due to their unique properties arising from the nanowire geometry. Here we report on the phenomenal responsivity and extended spectral range of scalable, vertically etched, silicon nanowire photodetector arrays defined by nanoimprint lithography. The high internal gain in these devices allows for detection at below room temperatures of subfemtowatt per micrometer visible illumination and picowatt infrared illumination resulting from band to surface state generation.
由于纳米线的独特几何形状，纳米线光电探测器具有出色的性能。在这里，我们报告了由纳米压印光刻定义的可扩展、垂直刻蚀的硅纳米线光电探测器阵列的卓越响应率和扩展光谱范围。这些器件中的高内部增益允许在低于室温下检测亚飞米每微米可见光和皮瓦红外光，这是由于能带至表面态的产生。
