基于硫属化物纳米晶的薄膜晶体管构成的柔性逻辑电路。

Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors.

机构信息

Department of Electrical Engineering, Korea University, Seoul, Korea.

出版信息

Nanotechnology. 2010 Jun 11;21(23):235204. doi: 10.1088/0957-4484/21/23/235204. Epub 2010 May 17.

PMID:20472946

Abstract

Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) films and n-channel HgSe-NC films were constructed on back-gate patterned plastic substrates. The NAND gate was made of two HgTe-p-channel thin film transistors (TFTs) in parallel and two HgSe-n-channel TFTs in series. The NOR gate was built up with both two HgSe-n-channel TFTs in parallel and two HgTe-p-channel TFTs in series. The mobility and on/off ratio for the p-channel TFTs were estimated to be 0.9 cm(2) V(-1) s(-1) and 10, respectively, and those for the n-channel TFTs were measured to be 1.8 cm(2) V(-1) s(-1) and 10(2), respectively. The NAND and NOR gates were operated with gains of 1.45 and 1.63 and transition widths of 7.8 and 6.2 V, respectively, at room temperature in air. In addition, the operations of the NAND and NOR logics are reproducible for up to 1000 strain cycles.

摘要

互补的 NAND 和 NOR 门由 p 型通道的 HgTe 纳米晶体（NC）薄膜和 n 型通道的 HgSe-NC 薄膜组成，并构建在背栅图案化的塑料衬底上。NAND 门由两个并联的 HgTe-p 型薄膜晶体管（TFT）和两个串联的 HgSe-n 型 TFT 组成。NOR 门由两个并联的 HgSe-n 型 TFT 和两个串联的 HgTe-p 型 TFT 组成。p 型 TFT 的迁移率和开关比分别估计为 0.9 cm(2) V(-1) s(-1)和 10，而 n 型 TFT 的迁移率和开关比分别测量为 1.8 cm(2) V(-1) s(-1)和 10(2)。在室温下的空气中，NAND 和 NOR 门的增益分别为 1.45 和 1.63，转换宽度分别为 7.8 和 6.2 V。此外，NAND 和 NOR 逻辑的操作可在多达 1000 次应变循环中重复。