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使用高性能分离碳纳米管薄膜晶体管的宏观电子集成电路。

Macroelectronic integrated circuits using high-performance separated carbon nanotube thin-film transistors.

机构信息

Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA.

出版信息

ACS Nano. 2010 Dec 28;4(12):7123-32. doi: 10.1021/nn1021378. Epub 2010 Nov 9.

DOI:10.1021/nn1021378
PMID:21062091
Abstract

Macroelectronic integrated circuits are widely used in applications such as flat panel display and transparent electronics, as well as flexible and stretchable electronics. However, the challenge is to find the channel material that can simultaneously offer low temperature processing, high mobility, transparency, and flexibility. Here in this paper, we report the application of high-performance separated nanotube thin-film transistors for macroelectronic integrated circuits. We have systematically investigated the performance of thin-film transistors using separated nanotubes with 95% and 98% semiconducting nanotubes, and high mobility transistors have been achieved. In addition, we observed that while 95% semiconducting nanotubes are ideal for applications requiring high mobility (up to 67 cm(2) V(-1) s(-1)) such as analog and radio frequency applications, 98% semiconducting nanotubes are ideal for applications requiring high on/off ratios (>10(4) with channel length down to 4 μm). Furthermore, integrated logic gates such as inverter, NAND, and NOR have been designed and demonstrated using 98% semiconducting nanotube devices with individual gating, and symmetric input/output behavior is achieved, which is crucial for the cascading of multiple stages of logic blocks and larger scale integration. Our approach can serve as the critical foundation for future nanotube-based thin-film macroelectronics.

摘要

宏观电子集成电路被广泛应用于平板显示和透明电子学、柔性和可拉伸电子学等领域。然而,面临的挑战是寻找能够同时提供低温处理、高迁移率、透明度和柔韧性的沟道材料。在本文中,我们报告了高性能分离式纳米管薄膜晶体管在宏观电子集成电路中的应用。我们系统地研究了使用 95%和 98%半导体纳米管的分离式纳米管薄膜晶体管的性能,并实现了高迁移率晶体管。此外,我们观察到,虽然 95%半导体纳米管适用于需要高迁移率(高达 67 cm(2) V(-1) s(-1))的应用,如模拟和射频应用,但 98%半导体纳米管适用于需要高开关比(>10(4),沟道长度降至 4 μm)的应用。此外,使用具有单独栅极的 98%半导体纳米管器件设计和展示了集成逻辑门,如反相器、与非门和或非门,并实现了对称的输入/输出行为,这对于级联多个逻辑模块和更大规模的集成至关重要。我们的方法可以为未来基于纳米管的薄膜宏观电子学提供关键基础。

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