School of Electrical, Computer, and Energy Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287-5706, USA.
Phys Rev Lett. 2010 Apr 30;104(17):176801. doi: 10.1103/PhysRevLett.104.176801. Epub 2010 Apr 27.
Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.
扫描栅显微镜 (SGM) 用于对通过电子束光刻和湿法刻蚀在 InAs 量子阱中创建的开放量子点中的疤痕结构进行成像。扫描图像显示出与电导波动中发现的周期性相关的磁场周期性。模拟表明,这些磁变换图像与实际在点中发现的疤痕非常相似,这些疤痕通过与量子达尔文主义一致的模式复制。