Visual Trading Systems LLC, St Petersburg Branch, 194044 St Petersburg, Russia.
Nanotechnology. 2010 Jul 2;21(26):265701. doi: 10.1088/0957-4484/21/26/265701. Epub 2010 Jun 4.
A nonlinear thermodynamic theory is developed for the strain-mediated direct magnetoelectric (ME) effect displayed by ferroelectric-ferromagnetic nanostructures. This effect results from transmission of magnetic-field-induced deformations of a thick ferromagnetic substrate to a thin ferroelectric overlayer, where the polarization changes due to lattice strains. The strain-dependent polarization and permittivity of an epitaxial nanolayer (few tens of nm thick) are calculated using the thermodynamic theory of single-domain ferroelectric films. The substrate magnetostrictive deformations are described phenomenologically, taking into account their nonlinear variation with magnetic field. The calculations show that ME polarization and voltage coefficients strongly depend on the initial strain state of the film. For BaTiO(3) and PbTiO(3) films deposited on Co(0.8)Zn(0.2)Fe(2)O(4), the out-of-plane polarization and related ME coefficients are calculated numerically as a function of magnetic field parallel to the interface. For films stabilized in the monoclinic phase, this transverse ME response depends on the orientation of magnetic field relative to their in-plane crystallographic axes. The longitudinal ME coefficient is also evaluated and, for a substrate geometry minimizing the demagnetizing field, predicted to be comparable to the transverse one. For BaTiO(3) and PbTiO(3) films deposited on Terfenol-D, the calculations yield high ME polarization coefficients approximately 10(-7) s m(-1) and giant ME voltage coefficients approximately 50 V cm(-1) Oe(-1).
提出了一种非线性热力学理论,用于研究铁电-铁磁纳米结构中表现出的应变调控直接磁电(ME)效应。该效应源于磁场诱导的厚铁磁衬底变形传递到薄铁电覆盖层,在覆盖层中晶格应变会导致极化变化。利用单晶铁电薄膜的热力学理论,计算了外延纳米层(几十纳米厚)的应变相关极化和介电常数。采用唯象学方法描述了铁磁衬底的磁致伸缩变形,考虑了其随磁场的非线性变化。计算表明,ME 极化和电压系数强烈依赖于薄膜的初始应变状态。对于沉积在 Co(0.8)Zn(0.2)Fe(2)O(4)上的 BaTiO(3)和 PbTiO(3)薄膜,数值计算了与界面平行的磁场下的面外极化和相关 ME 系数。对于稳定在单斜相的薄膜,这种横向 ME 响应取决于磁场相对于其面内晶体轴的方向。还评估了纵向 ME 系数,并预测对于最小化退磁场的衬底几何形状,其与横向系数相当。对于沉积在 Terfenol-D 上的 BaTiO(3)和 PbTiO(3)薄膜,计算得到了约为 10(-7) s m(-1)的高 ME 极化系数和约为 50 V cm(-1) Oe(-1)的巨大 ME 电压系数。