Gravesteijn D J
Appl Opt. 1988 Feb 15;27(4):736-8. doi: 10.1364/AO.27.000736.
Stoichiometric amorphous films of InSb or GaSb are found to have very short (< 15 ns) crystallization times when heated to temperatures close to their melting point. They can be used for write-once amorphous to crystalline optical recording. By adding Te to InSb the crystallization time can be tuned so that erasable crystalline to amorphous optical recording is feasible with a 1-microm sized circular erase spot. Carrier-to-noise ratios of more than 50 dB are achievable at compact disk (CD) recording conditions. The erasable medium allows for CD - type run - length - !imited encoding at user bit densities of < 0.6 pm/bit.
人们发现，InSb或GaSb的化学计量非晶薄膜在加热到接近其熔点的温度时，具有非常短（<15纳秒）的结晶时间。它们可用于一次性非晶到晶体的光学记录。通过向InSb中添加Te，可以调整结晶时间，从而使具有1微米大小圆形擦除光斑的可擦除晶体到非晶光学记录成为可能。在光盘（CD）记录条件下，载噪比可超过50分贝。这种可擦除介质允许在用户比特密度<0.6微米/比特的情况下进行CD型游程受限编码。
