Hamann Hendrik F, O'Boyle Martin, Martin Yves C, Rooks Michael, Wickramasinghe H Kumar
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Nat Mater. 2006 May;5(5):383-7. doi: 10.1038/nmat1627. Epub 2006 Apr 9.
Phase-change storage is widely used in optical information technologies (DVD, CD-ROM and so on), and recently it has also been considered for non-volatile memory applications. This work reports advances in thermal data recording of phase-change materials. Specifically, we show erasable thermal phase-change recording at a storage density of 3.3 Tb inch(-2), which is three orders of magnitude denser than that currently achievable with commercial optical storage technologies. We demonstrate the concept of a thin-film nanoheater to realize ultra-small heat spots with dimensions of less than 50 nm. Finally, we show in a proof-of-concept demonstration that an individual thin-film heater can write, erase and read the phase of these storage materials at competitive speeds. This work provides important stepping stones for a very-high-density storage or memory technology based on phase-change materials.
相变存储在光信息技术(DVD、CD-ROM等)中被广泛应用,最近它也被考虑用于非易失性存储器应用。这项工作报道了相变材料热数据记录方面的进展。具体而言,我们展示了在3.3 Tb英寸⁻²的存储密度下可擦除的热相变记录,这比目前商业光存储技术所能达到的密度高三个数量级。我们演示了薄膜纳米加热器的概念,以实现尺寸小于50 nm的超小热点。最后,我们在概念验证演示中表明,单个薄膜加热器能够以具有竞争力的速度写入、擦除和读取这些存储材料的相位。这项工作为基于相变材料的超高密度存储或存储器技术提供了重要的基石。