用于二极管泵浦被动调Q双波长Tm:YAP激光器的InGaAs/GaAs饱和吸收体

InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched dual-wavelength Tm:YAP lasers.

作者信息

Yao Baoquan, Tian Yi, Li Gang, Wang Yuezhu

机构信息

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China.

出版信息

Opt Express. 2010 Jun 21;18(13):13574-9. doi: 10.1364/OE.18.013574.

DOI:10.1364/OE.18.013574

PMID:20588489

Abstract

We demonstrate the first use of InGaAs/GaAs as a saturable absorber in the Q-switching of a diode pumped Tm(3+) doped laser operating at the wavelengths of 1940 nm and 1986 nm. The influence of the semiconductor saturable absorber's (SESA) position and thermal lens effect on the Q-switch characteristics was investigated. With a pump power of 35 W, the maximum pulse energy of 28.1 microJ with a pulse width of 447 ns at the pulse repetition frequency (PRF) of 43.7 kHz was obtained by selecting the appropriate position of the SESA.

摘要

我们展示了首次将铟镓砷/砷化镓用作可饱和吸收体，用于调Q二极管泵浦掺铥（Tm³⁺）激光器，该激光器工作波长为1940纳米和1986纳米。研究了半导体可饱和吸收体（SESA）的位置和热透镜效应对调Q特性的影响。通过选择SESA的合适位置，在泵浦功率为35瓦时，在43.7千赫兹的脉冲重复频率（PRF）下，获得了最大脉冲能量为28.1微焦、脉冲宽度为447纳秒的结果。