Ferry Vivian E, Verschuuren Marc A, Li Hongbo B T, Verhagen Ewold, Walters Robert J, Schropp Ruud E I, Atwater Harry A, Polman Albert
Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands.
Opt Express. 2010 Jun 21;18 Suppl 2:A237-45. doi: 10.1364/OE.18.00A237.
We report on the design, fabrication, and measurement of ultrathin film a-Si:H solar cells with nanostructured plasmonic back contacts, which demonstrate enhanced short circuit current densities compared to cells having flat or randomly textured back contacts. The primary photocurrent enhancement occurs in the spectral range from 550 nm to 800 nm. We use angle-resolved photocurrent spectroscopy to confirm that the enhanced absorption is due to coupling to guided modes supported by the cell. Full-field electromagnetic simulation of the absorption in the active a-Si:H layer agrees well with the experimental results. Furthermore, the nanopatterns were fabricated via an inexpensive, scalable, and precise nanopatterning method. These results should guide design of optimized, non-random nanostructured back reflectors for thin film solar cells.
我们报告了具有纳米结构等离子体背接触的超薄非晶硅氢化太阳能电池的设计、制造和测量,与具有平坦或随机纹理背接触的电池相比,这些电池展示出增强的短路电流密度。主要的光电流增强发生在550纳米至800纳米的光谱范围内。我们使用角分辨光电流光谱来确认增强的吸收是由于与电池支持的导模耦合。有源非晶硅氢化层中吸收的全场电磁模拟与实验结果吻合良好。此外,纳米图案是通过一种廉价、可扩展且精确的纳米图案化方法制造的。这些结果应指导用于薄膜太阳能电池的优化非随机纳米结构背反射器的设计。