具有低注入电流密度的宽带外腔可调谐量子点激光器。

Broadband external cavity tunable quantum dot lasers with low injection current density.

作者信息

Lv X Q, Jin P, Wang W Y, Wang Z G

机构信息

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.

出版信息

Opt Express. 2010 Apr 26;18(9):8916-22. doi: 10.1364/OE.18.008916.

DOI:10.1364/OE.18.008916

PMID:20588736

Abstract

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to ~150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

摘要

实现了基于InAs/GaAs量子点的宽带光栅耦合外腔激光器。该器件在低连续波注入电流密度（458 A/cm²）下的波长调谐范围为1141.6 nm至1251.7 nm。可调谐带宽连续覆盖量子点基态和第一激发态的发光。研究了腔长和抗反射刻面涂层对器件性能的影响。结果表明，抗反射刻面涂层将调谐带宽扩展至约150 nm，同时阈值电流密度明显增加，这归因于器件有源区光场与量子点之间相互作用的减弱。