Li Xinkun, Jin Peng, An Qi, Wang Zuocai, Lv Xueqin, Wei Heng, Wu Jian, Wu Ju, Wang Zhanguo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Nanoscale Res Lett. 2011 Dec 12;6(1):625. doi: 10.1186/1556-276X-6-625.
Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated.
基于砷化铟/砷化镓量子点[QD]，通过将传统的超发光二极管[SLD]与半导体光放大器单片集成，实现了一种高功率宽带超发光二极管。两段式量子点超发光二极管器件展现出高于500 mW的高输出功率以及86 nm的宽发射光谱。通过适当地控制两段式量子点超发光二极管器件中两段的电流注入，超发光二极管的输出功率可在200至500 mW的宽范围内进行调谐，同时基于量子点基态发射和第一激发态发射之间的平衡保持宽发射光谱。研究了两段具有不同泵浦水平的两段式量子点超发光二极管的增益过程。
