Lee Shinyoung, Eom Seok Chan, Chang Jee Soo, Huh Chul, Sung Gun Yong, Shin Jung H
Department of Physics, KAIST 373-1 Guseong-dong, Yuseong-Gu, Daejeon, South Korea.
Opt Express. 2010 May 24;18(11):11209-15. doi: 10.1364/OE.18.011209.
We design and fabricate pedestal-type, 15 microm diameter silicon nitride microdisk resonators on Si chip with horizontal air-slot using selective wet etching between Si, SiO2, and SiNx. As the slot structure is determined by deposition process, air slots that are as thin as 40 nm and as deep as 5 microm with ultra-smooth slot surfaces can easily be fabricated with photolithography only. Fundamental TM-like slot mode in which the E-field is greatly enhanced within slot was observed with an intrinsic Q factor of approximately 34,000 (lambdares=1523.7 nm) and energy overlap in slot region of 21.6%.
我们通过在硅、二氧化硅和氮化硅之间进行选择性湿法蚀刻，在具有水平气隙的硅芯片上设计并制造了基座型、直径为15微米的氮化硅微盘谐振器。由于槽结构由沉积工艺决定，仅通过光刻就能轻松制造出厚度仅为40纳米、深度达5微米且槽表面超光滑的气隙。观察到了基本的类TM槽模式，其中电场在槽内大大增强，本征品质因数约为34000（λres = 1523.7纳米），槽区域的能量重叠为21.6%。
