Chang Jee Soo, Eom Seok Chan, Sung Gun Yong, Shin Jung H
Department of Physics, KAIST 373-1 Guseong-dong, Yuseong-Gu, Daejeon, Rep. of Korea.
Opt Express. 2009 Dec 7;17(25):22918-24. doi: 10.1364/OE.17.022918.
On-chip, planar integration of Er-doped Silicon-rich silicon nitride microdisks with SU-8 waveguide and polymer cladding is achieved. The lack of high temperature or etching processes allows back-end integration without any optical damage to the microcavity resonator. The maximum measured Q-factor at 1475.5 nm was 13,000, corresponding to calculated intrinsic resonator Q-factor of 25,000 that is limited by process-related roughness.
实现了掺铒富硅氮化硅微盘与SU-8波导和聚合物包层的片上平面集成。由于缺乏高温或蚀刻工艺，因此可以进行后端集成，而不会对微腔谐振器造成任何光学损伤。在1475.5nm处测得的最大品质因数为13000，对应于计算得出的本征谐振器品质因数25000，该值受与工艺相关的粗糙度限制。
