纳米断层扫描研究硅衬底上的陷波图案化 Si(001) 上生长的 SiGe 岛的合金化和应变弛豫。

Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069, Dresden, Germany.

Nanoscale Res Lett. 2009 Jun 6;4(9):1073-7. doi: 10.1007/s11671-009-9360-4.

The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio, a modified geometry of the substrate provides an enhancement of the relaxation, finally leading to a reduced intermixing.

通过基于原子力显微镜（AFM）的纳米层析技术，确定了在平面和坑图案化衬底上生长的单个 SiGe/Si（001）岛的三维组成分布轮廓。观察到的横向和纵向组成梯度的差异与岛的形态相关。这种方法使我们能够利用 AFM 同时收集 SiGe 岛的组成和应变信息。我们的定量分析表明，对于具有固定纵横比的岛，衬底的修改几何形状提供了增强的弛豫，最终导致混合减少。