Nanoscale Res Lett. 2009 Apr 25;4(7):748-52. doi: 10.1007/s11671-009-9309-7.
Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of (4)G(5/2) --> (6)H(5/2), (4)G(5/2) --> (6)H(7/2), (4)G(5/2) --> (6)H(9/2), and (4)G(5/2) --> (6)H(11/2) transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.
掺钐（Sm）氮化铝（AlN）薄膜采用射频磁控溅射法在 77K 下沉积在硅（100）衬底上。在 100-200 瓦射频功率和 5-8 毫托氮气下，使用含有 Sm 的 Al 金属靶材生长出 200nm 厚的薄膜。X 射线衍射结果表明，薄膜为非晶态。进行了阴极发光（CL）研究，观察到 Sm 在 564、600、648 和 707nm 处有四个峰，这是由于（4）G(5/2) --> (6)H(5/2)、(4)G(5/2) --> (6)H(7/2)、(4)G(5/2) --> (6)H(9/2) 和 (4)G(5/2) --> (6)H(11/2)跃迁。光致发光（PL）在 600nm 和 707nm 处提供主要峰，而 CL 在 600nm 和 648nm 处分别给出强烈的峰。薄膜在氮气气氛中于 1200K 下热激活半小时。热激活增强了发光强度。
