Maqbool Muhammad, Wilson Evan, Clark Joshua, Ahmad Iftikhar, Kayani Asghar
Department of Physics & Astronomy, Ball State University, Muncie, Indiana 47306, USA.
Appl Opt. 2010 Feb 1;49(4):653-7. doi: 10.1364/AO.49.000653.
Thin films of AlN doped with chromium were deposited on flat Si (100) substrates and optical fibers by rf magnetron sputtering, using 100-200 W rf power and 5-8 mTorr nitrogen. The thickness of the films on the flat silicon substrate was 400 nm and on optical fibers with 80 mum and smaller diameters was up to 10 mum. Surface characterization and luminescence properties were investigated to fabricate resonant laser cavities. X-ray diffraction and scanning electron microscope studies showed that films deposited on flat silicon were amorphous, while those deposited on the fibers show columnar growth and some gain structure, most probably due to a temperature rise at the substrate during deposition. Cathodoluminescence and photoluminescence of the as-deposited and thermally activated AlN:Cr films showed an emission peak at 702 nm as a result of the (4)T(2) --> (4)A(2) transition.
通过射频磁控溅射，在100 - 200 W射频功率和5 - 8毫托氮气的条件下，将掺杂铬的氮化铝薄膜沉积在平面硅（100）衬底和光纤上。平面硅衬底上薄膜的厚度为400 nm，直径为80μm及更小的光纤上薄膜的厚度可达10μm。为了制造共振激光腔，对表面特性和发光特性进行了研究。X射线衍射和扫描电子显微镜研究表明，沉积在平面硅上的薄膜是非晶态的，而沉积在光纤上的薄膜呈现柱状生长且有一些增益结构，这很可能是由于沉积过程中衬底温度升高所致。沉积态和热激活的AlN:Cr薄膜的阴极发光和光致发光显示，由于(4)T(2)→(4)A(2)跃迁，在702 nm处有一个发射峰。
