Shen Guozhen, Chen Di
Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074 People's Republic of China.
Nanoscale Res Lett. 2009 May 15;4(8):779-788. doi: 10.1007/s11671-009-9338-2.
The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn(3)P(2) nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.
II-V族半导体具有窄带隙，是一类重要材料，在红外探测器、激光器、太阳能电池、超声倍增器和霍尔发生器等方面有诸多应用。自首次报道喇叭状Zn(3)P(2)纳米线以来，II-V族半导体的一维（1-D）纳米结构近来备受研究关注，因为这些特殊的一维纳米结构可能在制造新型电子和光电子纳米器件方面找到应用。本文涵盖了迄今已合成的一维II-V族半导体纳米结构，重点关注纳米管、纳米线、纳米带以及诸如异质结构纳米线等特殊纳米结构。基于一维II-V族半导体纳米结构构建的新型电子和光电器件也将予以讨论，其中包括金属-绝缘体-半导体场效应晶体管、金属-半导体场效应晶体管和p-n异质结光电二极管。我们旨在为读者简要介绍这些令人兴奋的研究活动。
