基于多孔阳极氧化铝膜通过Al₂O₃纳米线的化学转化制备密集堆积的AlN纳米线

Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al(2)O(3) Nanowires Based on Porous Anodic Alumina Film.

作者信息

Yuan Zhi-Hao, Sun Shao-Qing, Duan Yue-Qin, Wang Da-Jian

出版信息

Nanoscale Res Lett. 2009 Jun 12;4(10):1126-1129. doi: 10.1007/s11671-009-9368-9.

DOI:10.1007/s11671-009-9368-9

PMID:20596468

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2893822/

Abstract

Porous alumina film on aluminum with gel-like pore wall was prepared by a two-step anodization of aluminum, and the corresponding gel-like porous film was etched in diluted NaOH solution to produce alumina nanowires in the form of densely packed alignment. The resultant alumina nanowires were reacted with NH(3) and evaporated aluminum at an elevated temperature to be converted into densely packed aluminum nitride (AlN) nanowires. The AlN nanowires have a diameter of 15-20 nm larger than that of the alumina nanowires due to the supplement of the additional evaporated aluminum. The results suggest that it might be possible to prepare other aluminum compound nanowires through similar process.

摘要

通过对铝进行两步阳极氧化制备了具有凝胶状孔壁的铝上多孔氧化铝膜，然后将相应的凝胶状多孔膜在稀氢氧化钠溶液中蚀刻，以制备出紧密排列的氧化铝纳米线。所得的氧化铝纳米线在高温下与氨反应并蒸发铝，从而转化为紧密排列的氮化铝（AlN）纳米线。由于额外蒸发铝的补充，AlN纳米线的直径比氧化铝纳米线大15 - 20纳米。结果表明，通过类似的过程制备其他铝化合物纳米线可能是可行的。