Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
Nanotechnology. 2010 Jul 23;21(29):295502. doi: 10.1088/0957-4484/21/29/295502. Epub 2010 Jul 5.
We report the fabrication of a double Schottky barrier (DSB) device by self-assembly of nanowires (NWs). The operating principle of the device is governed by the surface depletion effects of the NWs. High DSBs were formed at the contact interface of ZnO NWs self-assembled into bascule nanobridge (NB) structures. The bascule NB structures exhibited high sensitivity and fast response to UV illumination, having a photocurrent to dark current ratio > 10(4) and a recovery time as short as approximately 3 s. The enhanced UV photoresponse of the bascule NB structure is ascribed to the DSB, whose height is tunable with UV light, being high (approximately 0.77 eV) in dark and low under UV. The bascule NB structure provides a new type of optical switch for spectrally selective light sensing applications ranging from environmental monitoring to optical communication.
我们通过自组装纳米线（NWs）制造了一种双肖特基势垒（DSB）器件。该器件的工作原理由 NWs 的表面耗尽效应控制。在自组装成跷板纳米桥（NB）结构的 ZnO NWs 的接触界面形成了高 DSB。跷板 NB 结构对 UV 光照表现出高灵敏度和快速响应，光电流与暗电流的比值>10(4)，恢复时间短至约 3 s。跷板 NB 结构增强的 UV 光响应归因于 DSB，其高度可随 UV 光调节，在暗态下较高（约 0.77 eV），在 UV 下较低。跷板 NB 结构为从环境监测到光通信的光谱选择性光传感应用提供了一种新型光开关。
