自组装氧化锌纳米线网络通道的简易制备及其栅极控制的紫外探测

Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection.

作者信息

Chang Hochan, Lee Do Hoon, Kim Hyun Soo, Park Jonghyurk, Lee Byung Yang

机构信息

Department of Mechanical Engineering, Korea University, Seoul, 02841, South Korea.

Electronics and Telecommunications Research Institute, Daejeon, 34129, South Korea.

出版信息

Nanoscale Res Lett. 2018 Dec 24;13(1):413. doi: 10.1186/s11671-018-2774-0.

DOI:10.1186/s11671-018-2774-0

PMID:30584652

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6305260/

Abstract

We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 10, transconductance around 47 nS, and mobility around 0.175 cm V s. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage V, showing maximum photoresponsivity at V = 7 V.

摘要

我们展示了一种简便的方法来制造基于组装氧化锌纳米线（ZnO NW）网络场效应晶体管（FET）的一系列栅极可控紫外传感器。这是通过将分子表面编程图案化和在极性区域上进行选择性NW组装（避免非极性区域）相结合来实现的，随后在300°C下进行热处理以确保NW之间的稳定接触。ZnO NW网络FET器件显示出典型的n型特性，开/关比为10，跨导约为47 nS，迁移率约为0.175 cm² V⁻¹ s⁻¹。此外，这些器件对紫外光表现出光响应行为，该行为可由施加的栅极电压控制。发现光响应度与沟道电压V成线性比例，在V = 7 V时显示出最大光响应度。