School of Physics, National University of Ireland, Galway, University Road, Galway, Ireland.
Phys Med Biol. 2010 Jul 21;55(14):4083-105. doi: 10.1088/0031-9155/55/14/009. Epub 2010 Jul 5.
Monte Carlo simulation can accurately calculate electron fluence at the patient surface and the resultant dose deposition if the initial source electron beam and linear accelerator treatment head geometry parameters are well characterized. A recent approach used large electron fields to extract these simulation parameters. This method took advantage of the absence of lower energy, widely scattered electrons from the applicator resulting in more accurate data. It is important to validate these simulation parameters for clinically relevant fields. In the current study, these simulation parameters are applied to fields collimated by applicators and inserts to perform a comprehensive validation. Measurements were performed on a Siemens Oncor linear accelerator for 6 MeV, 9 MeV, 12 MeV, 15 MeV, 18 MeV and 21 MeV electron beams and collimators ranging from an open 25 x 25 cm(2) applicator to a 10 x 10 cm(2) applicator with a 1 cm diameter cerrobend insert. Data were collected for inserts placed in four square applicators. Monte Carlo simulations were performed using EGSnrc/BEAMnrc. Source and geometry parameters were obtained from previous measurements and simulations with the maximum field size (40 x 40 cm(2)). The applicators were modelled using manufacturer specifications, confirmed by direct measurements. Cerrobend inserts were modelled based on calliper measurements. Monte Carlo-calculated percentage depth dose and off-axis profiles agreed with measurements to within the least restrictive of 2%/1 mm in most cases. For the largest applicator (25 x 25 cm(2)), and 18 MeV and 21 MeV beams, differences in dose profiles of 3% were observed. Calculated relative output factors were within 2% of those measured with an electron diode for fields 1.5 cm in diameter or larger. The disagreement for 1 cm diameter fields was up to 5%. For open applicators, simulations agreed with parallel plate chamber-measured relative output factors to 1%. This work has validated a recent methodology used to extract data on the electron source and treatment head from large electron fields, resulting in a reduction in the number of unknown parameters in treatment head simulation. Applicator and insert collimated electron fields were accurately simulated without adjusting these parameters. Results demonstrate that commissioning of electron beams based on large electron field measurements is a viable option.
如果初始源电子束和直线加速器治疗头几何参数得到很好的描述,蒙特卡罗模拟可以准确计算患者表面的电子注量和由此产生的剂量沉积。最近的一种方法使用大电子场来提取这些模拟参数。该方法利用了施源器中不存在低能、广泛散射的电子,从而获得更准确的数据。为临床相关场验证这些模拟参数非常重要。在目前的研究中,这些模拟参数应用于由施源器和插件准直的场中,以进行全面验证。在西门子 Oncor 直线加速器上对 6 MeV、9 MeV、12 MeV、15 MeV、18 MeV 和 21 MeV 电子束和从 25x25cm(2) 开放施源器到带有 1cm 直径 Cerrobend 插件的 10x10cm(2) 施源器的各种准直器进行了测量。在四个方形施源器中放置插件时收集数据。使用 EGSnrc/BEAMnrc 进行蒙特卡罗模拟。源和几何参数是从以前的最大场尺寸(40x40cm(2))测量和模拟中获得的。根据制造商规格对施源器进行建模,通过直接测量进行确认。基于卡尺测量值对 Cerrobend 插件进行建模。在大多数情况下,蒙特卡罗计算的百分深度剂量和离轴曲线与测量值相差在 2%/1mm 以内。对于最大的施源器(25x25cm(2))和 18 MeV 和 21 MeV 束,观察到剂量曲线的差异为 3%。对于直径为 1.5cm 或更大的场,计算出的相对输出因子与电子二极管测量值相差在 2%以内。对于 1cm 直径的场,最大偏差为 5%。对于开放施源器,模拟与平行板室测量的相对输出因子一致,精度为 1%。这项工作验证了一种最近从大电子场中提取电子源和治疗头数据的方法,从而减少了治疗头模拟中的未知参数数量。无需调整这些参数即可准确模拟施源器和插件准直的电子场。结果表明,基于大电子场测量值对电子束进行调试是一种可行的选择。