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一维杂化多氮掺杂碳纳米管帽的电子输运特性。

Electron transport characteristics of one-dimensional heterojunctions with multi-nitrogen-doped capped carbon nanotubes.

机构信息

Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.

出版信息

Nanoscale. 2010 Dec;2(12):2758-64. doi: 10.1039/c0nr00411a. Epub 2010 Sep 29.

Abstract

We present a systematic analysis of electron transport characteristics for one-dimensional heterojunctions with two multi-nitrogen-doped (multi-N-doped) capped carbon nanotubes (CNTs) facing one another at different numbers of nitrogen atoms and conformations. Our results show that the modification of the molecular orbitals by the nitrogen dopants generates conducting channels in the designed heterojunctions inducing multi-switching behavior with sequential negative differential resistance (NDR). The NDR behavior significantly depends on the doping site and conformation of doped nitrogen atoms. Furthermore, we provide a clear interpretation for the NDR behavior by a rigid shift model of the HOMO- and LUMO-filtered energy levels in the left and right electrodes under the applied biases. We believe that our results will give an insight into the design and implementation of various electronic logic functions based on CNTs for applications in the field of nanoelectronics.

摘要

我们对具有两个多氮掺杂(多 N 掺杂)帽状碳纳米管(CNT)的一维异质结的电子输运特性进行了系统分析,这些 CNT 彼此相对,氮原子数量和构象不同。我们的结果表明,氮掺杂剂对分子轨道的修饰在设计的异质结中产生了导电通道,诱导了具有顺序负微分电阻(NDR)的多开关行为。NDR 行为显著取决于掺杂位置和掺杂氮原子的构象。此外,我们通过施加偏压下左右电极中 HOMO 和 LUMO 过滤能级的刚性位移模型,对 NDR 行为提供了清晰的解释。我们相信,我们的结果将为基于 CNT 的各种电子逻辑功能的设计和实现提供深入了解,为纳米电子学领域的应用提供帮助。

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