Center for High Performance Simulation and Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-7518, USA.
J Chem Phys. 2012 Jan 7;136(1):014702. doi: 10.1063/1.3673441.
Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is a deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.
氮掺杂碳纳米带的一维特性、对称性及其与边缘态的相互作用对其有深远影响。通过使用最先进的从头算方法,包括杂化精确交换密度泛函理论,我们发现,对于氮掺杂的锯齿形纳米带,由于两个子晶格的不等价性,电子性质强烈依赖于子晶格效应。对于扶手椅形纳米带,氮掺杂的影响取决于纳米带家族:对于家族 2 和家族 0,氮诱导的能级位于导带中,而对于家族 1,氮能级位于能带间隙中。在锯齿形纳米带中,靠近边缘的氮是一个深能级中心,而在扶手椅形纳米带中,其行为类似于有效质量型施主,其电离能取决于能带间隙的值。在手性纳米带中,我们发现杂质能级和形成能强烈依赖于掺杂剂的边缘位置,而这种位置特异性在磁化强度的大小上没有表现出来。