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n 型 Bi2Te2.7Se0.3 的各向异性热电性能和结构的实验研究。

Experimental studies on anisotropic thermoelectric properties and structures of n-type Bi2Te2.7Se0.3.

机构信息

Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA.

出版信息

Nano Lett. 2010 Sep 8;10(9):3373-8. doi: 10.1021/nl101156v.

Abstract

The peak dimensionless thermoelectric figure-of-merit (ZT) of Bi(2)Te(3)-based n-type single crystals is about 0.85 in the ab plane at room temperature, which has not been improved over the last 50 years due to the high thermal conductivity of 1.65 W m(-1) K(-1) even though the power factor is 47 x 10(-4) W m(-1) K(-2). In samples with random grain orientations, we found that the thermal conductivity can be decreased by making grain size smaller through ball milling and hot pressing, but the power factor decreased with a similar percentage, resulting in no gain in ZT. Reorienting the ab planes of the small crystals by repressing the as-pressed samples enhanced the peak ZT from 0.85 to 1.04 at about 125 degrees C, a 22% improvement, mainly due to the more increase on power factor than on thermal conductivity. Further improvement is expected when the ab plane of most of the small crystals is reoriented to the direction perpendicular to the press direction and grains are made even smaller.

摘要

基于 Bi(2)Te(3)的 n 型单晶的无量纲热电优值(ZT)峰值在室温下约为 0.85,但由于 1.65 W m(-1) K(-1)的高导热率,即使功率因子为 47 x 10(-4) W m(-1) K(-2),50 年来一直没有得到提高。在具有随机晶粒取向的样品中,我们发现通过球磨和热压使晶粒尺寸变小可以降低热导率,但功率因子以相似的百分比下降,导致 ZT 没有提高。通过对压制后的样品进行再压制,使 ab 平面重新取向,可将峰值 ZT 从约 125 摄氏度的 0.85 提高到 1.04,提高了 22%,这主要是由于功率因子的增加比热导率的增加更为显著。当大多数小晶体的 ab 平面重新定向到垂直于压力方向的方向并且晶粒变得更小,预计还会有进一步的提高。

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