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磁掺杂拓扑绝缘体表面的大质量狄拉克费米子。

Massive Dirac fermion on the surface of a magnetically doped topological insulator.

机构信息

Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA.

出版信息

Science. 2010 Aug 6;329(5992):659-62. doi: 10.1126/science.1189924.

Abstract

In addition to a bulk energy gap, topological insulators accommodate a conducting, linearly dispersed Dirac surface state. This state is predicted to become massive if time reversal symmetry is broken, and to become insulating if the Fermi energy is positioned inside both the surface and bulk gaps. We introduced magnetic dopants into the three-dimensional topological insulator dibismuth triselenide (Bi2Se3) to break the time reversal symmetry and further position the Fermi energy inside the gaps by simultaneous magnetic and charge doping. The resulting insulating massive Dirac fermion state, which we observed by angle-resolved photoemission, paves the way for studying a range of topological phenomena relevant to both condensed matter and particle physics.

摘要

除了体能隙外,拓扑绝缘体还具有一种传导性、线性分散的狄拉克表面态。如果时间反演对称性被破坏,该表面态预计会变得有质量;如果费米能位于表面和体能隙内,该表面态会变得绝缘。我们向三维拓扑绝缘体二铋三硒化物(Bi2Se3)中引入磁性掺杂剂,以打破时间反演对称性,并通过同时的磁性和电荷掺杂将费米能置于能隙内。我们通过角分辨光发射观察到的这种结果是绝缘的、有质量的狄拉克费米子态,为研究与凝聚态和粒子物理都相关的一系列拓扑现象铺平了道路。

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