Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
Nano Lett. 2010 Sep 8;10(9):3722-6. doi: 10.1021/nl1023518.
Metallic nanowires are useful for fabricating highly integrated nanoscale electrical, magnetic, and photonic devices. However, conventional methods based on bottom-up growth techniques are subject to concerns such as broad distributions in their dimension as well and difficulties in precise placement of the nanowires. These issues can be solved by the guided self-assembly of block copolymer thin films that can produce periodic arrays of monodisperse nanoscale features with excellent positional accuracy. Here, we report transfer of high-quality linear block copolymer patterns into various metals, Ti, W, Pt, Co, Ni, Ta, Au, and Al, to fabricate highly ordered nanowire arrays with widths down to 9 nm. This novel patterning process does not require specific film deposition techniques or etch-chemistries. We also describe their structural, magnetic, and electrical properties.
金属纳米线在制造高度集成的纳米级电气、磁性和光子器件方面非常有用。然而，基于自下而上生长技术的传统方法存在尺寸分布广泛和纳米线精确定位困难等问题。这些问题可以通过嵌段共聚物薄膜的引导自组装来解决，这种方法可以生成具有优异位置精度的单分散纳米级特征的周期性阵列。在这里，我们报告了将高质量的线性嵌段共聚物图案转移到各种金属（Ti、W、Pt、Co、Ni、Ta、Au 和 Al）中，以制造宽度低至 9nm 的高度有序纳米线阵列。这种新颖的图案化工艺不需要特定的薄膜沉积技术或刻蚀化学。我们还描述了它们的结构、磁性和电学性质。
