A solution-processed air-stable perylene diimide derivative for N-type organic thin film transistors.

For future all-soluble organic thin film transistor (OTFT) applications, a new soluble n-type air-stable perylene diimide derivative semiconductor material with (trifluoromethyl)benzyl groups (TC-PDI-F) is synthesized. The film is formed by spin-coating in air and optimized for OTFT fabrications. The transistor characteristics and air-stability of the TC-PDI-F OTFTs is measured to investigate the feasibility of using solution-processed TC-PDI-F for future OTFT applications. For all-solution OTFT process applications, the transistor characteristics are demonstrated by using TC-PDI-F as an n-type semiconductor material and liquid-phase-deposited SiO(2) (LPD-SiO(2) ) as a gate dielectric material. All processes (except material synthesis and electrode deposition) and electrical measurements are conducted in air.