Stutius W, Streifer W
Appl Opt. 1977 Dec 1;16(12):3218-22. doi: 10.1364/AO.16.003218.
Silicon nitride (Si(3)N(4)) thin film optical waveguides with propagation losses of less than 0.1 dB/cm for the TE(0) mode at lambda(0) = 6328 A have been successfully grown by low-pressure chemical vapor deposition. Silicon wafers 5 cm in diameter were used as substrates, and the Si(3)N(4) was separated from the substrate by a steamoxide SiO(2) buffer layer. Propagation losses are examined for the various waveguide modes, and their dependence on waveguide parameters and wavelength are discussed and compared with exact calculations. Leakage into the silicon substrate is shown to be a major loss mechanism, especially at longer wavelengths and for higher mode numbers.
通过低压化学气相沉积法已成功生长出氮化硅（Si₃N₄）薄膜光波导，其在波长λ₀ = 6328 Å 时，TE₀模式的传播损耗小于0.1 dB/cm。直径为5 cm的硅片用作衬底，Si₃N₄通过蒸汽氧化SiO₂缓冲层与衬底分离。研究了各种波导模式的传播损耗，并讨论了它们对波导参数和波长的依赖性，并与精确计算结果进行了比较。结果表明，泄漏到硅衬底中是主要的损耗机制，尤其是在较长波长和较高模式数的情况下。
