Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA.
Opt Lett. 2010 Aug 15;35(16):2699-701. doi: 10.1364/OL.35.002699.
We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250 A/W at 1550 nm, -75 degrees C, and 1.5V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e(-)) rms at a frame rate of 1950 frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.
我们报告了一种基于具有内部无雪崩放大机制的短波长红外 InGaAs/GaAsSb/InP 探测器的纳米注入成像仪的信噪比性能。由于探测器中的内部电荷放大机制，成像仪中的测试像素在 -75°C 和 1.5V 时在 1550nm 处达到 250A/W 的响应值。在成像仪中，在 1950 帧/秒的帧率下，测量到的成像仪噪声为 28 个电子(e(-))均方根。此外，与高端短波红外成像仪相比，由于在高放大时的小额外噪声，纳米注入相机在热电冷却温度下的信噪比提高了 2 个数量级。
