Martin P, Netterfield R, Kinder T, Bendavid A
Appl Opt. 1992 Nov 1;31(31):6734-40. doi: 10.1364/AO.31.006734.
The optical properties and stress in thin films of aluminum nitride have been studied as a function of ion energy and the ion-to-vapor arrival ratio (J(i)/J(v)) for the N(2)(+) ion-assisted deposition of aluminum. The ion energy was varied between 75 and 1000 eV. The refractive index was found to depend on the ion energy and flux. The highest index was 2.10 at 633 nm. The films were found to be highly transparent over the wavelength region 275-800 nm. The films were found to be free of major oxide contamination, and x-ray photoelectron spectroscopy studies revealed the presence of excess nitrogen in films prepared at high J(i)/J(v) values. The film stress was also found to be related to the ion energy, and an anomalously high compressive stress of -5.0 GPa was found for 100-eV N(2)(+)-assisted depositions. By comparison, films prepared by magnetron deposition were found to have lower refractive indices (1.97-1 99, n633) and higher stress (-8 to -12 GPa) when deposited in pure nitrogen.
对于在氮气离子辅助下沉积铝薄膜的过程，研究了氮化铝薄膜的光学性质和应力与离子能量以及离子与蒸汽到达率（J(i)/J(v)）之间的函数关系。离子能量在75至1000电子伏特之间变化。发现折射率取决于离子能量和通量。在633纳米处最高折射率为2.10。发现这些薄膜在275 - 800纳米波长范围内具有高透明度。发现这些薄膜没有主要的氧化物污染，并且X射线光电子能谱研究表明，在高J(i)/J(v)值下制备的薄膜中存在过量的氮。还发现薄膜应力与离子能量有关，对于100电子伏特的氮气离子辅助沉积，发现异常高的压缩应力为-5.0吉帕。相比之下，发现通过磁控溅射沉积制备的薄膜在纯氮气中沉积时具有较低的折射率（1.97 - 1.99，n633）和较高的应力（-8至-12吉帕）。
