Lambrinos M F, Valizadeh R, Colligon J S
Appl Opt. 1996 Jul 1;35(19):3620-6. doi: 10.1364/AO.35.003620.
Thin silicon nitride (Si(1_x)N(x)) films were synthesized without substrate heating by means of reactive argon-ion sputtering of either silicon or a silicon nitride target in the 1000-1500-eV energy range at a nitrogen partial pressure of 1.3 × 10(-2) Pa and with simultaneous nitrogen ion-assisted bombardment in the 300-500-eV low energy range. The extinction coefficient and refractive index of the films were directly dependent on the N(+) ion-to-atom arrival ratio, assisted ion energy, film growth rate, and indicated a correlation with film stoichiometry and disorder. Si(3)N(4) films were obtained for N(+) ion/Si atom arrival ratios from 0.6 to 1.7 and for different Si:N atom arrival rates and had a refractive index as high as 2.04 (633 nm) and a low hydrogen content as indicated by IR spectra.
通过在1.3×10⁻² Pa的氮分压下，在1000 - 1500 eV能量范围内对硅或氮化硅靶进行反应性氩离子溅射，并同时在300 - 500 eV低能量范围内进行氮离子辅助轰击，在不加热衬底的情况下合成了薄氮化硅（Si(1_x)N(x)）薄膜。薄膜的消光系数和折射率直接取决于N⁺离子与原子的到达比、辅助离子能量、薄膜生长速率，并且表明与薄膜化学计量比和无序度相关。对于N⁺离子/硅原子到达比为0.6至1.7以及不同的硅：氮原子到达速率，获得了Si₃N₄薄膜，其折射率高达2.04（633 nm），并且红外光谱表明氢含量较低。
