Tang Chien-Jen, Jaing Cheng-Chung, Lee Kun-Hsien, Lee Cheng-Chung
Department of Optoelectronic System Engineering, Minghsin University of Science and Technology, Hsin-Chu 304, Taiwan.
Appl Opt. 2011 May 1;50(13):1945-50. doi: 10.1364/AO.50.001945.
Aluminum nitride films were deposited by alternating-current dual reactive magnetron sputtering. The influence of different nitrogen flow and working pressures at a sputtering power of 5 kW on the refractive index, extinction coefficient, crystalline structure, residual stress, and surface roughness of aluminum nitride films was discussed. The aluminum nitride film would have high refractive index, low extinction coefficient and small residual stress at suitable nitrogen flow rate and low working pressure.
采用交流双反应磁控溅射法制备了氮化铝薄膜。讨论了在溅射功率为5kW时，不同氮气流量和工作压力对氮化铝薄膜的折射率、消光系数、晶体结构、残余应力和表面粗糙度的影响。在合适的氮气流量和低工作压力下，氮化铝薄膜将具有高折射率、低消光系数和小的残余应力。
