Sungkyunkwan Advanced Institute of Nanotechnology, Department of Physics, Department of Energy Science, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746, Korea.
ACS Nano. 2010 Sep 28;4(9):5480-6. doi: 10.1021/nn101581k.
Edge-closed and edge-opened graphene ribbons were synthesized on Pd nanowire templates using plasma-enhanced chemical vapor deposition (PECVD). After metal nanowire etching, the tubular shaped thin graphene layers were collapsed to edge-closed graphene ribbon. In order to make edge-opened graphene ribbons, the graphene layers on the top part of the metal nanowire were selectively etched by O(2) plasma. The protected graphene layers at the bottom of nanowire are transformed to edge-opened graphene ribbon after nanowire etching. Because of defect-free edges, edge-closed graphene ribbon showed reduced D-band intensity compared to edge-opened graphene ribbons, and moreover, the conductivity of edge-closed graphene ribbon was much higher than that of edge-opened graphene ribbon.
采用等离子体增强化学气相沉积（PECVD）在钯纳米线模板上合成了边缘封闭和边缘开放的石墨烯带。在金属纳米线刻蚀后，管状的薄石墨烯层坍塌成边缘封闭的石墨烯带。为了得到边缘开放的石墨烯带，通过 O(2)等离子体选择性地刻蚀金属纳米线顶部的石墨烯层。纳米线刻蚀后，纳米线底部受保护的石墨烯层转变成边缘开放的石墨烯带。由于边缘无缺陷，与边缘开放的石墨烯带相比，边缘封闭的石墨烯带的 D 带强度降低，而且，边缘封闭的石墨烯带的电导率远高于边缘开放的石墨烯带。
