Wang Bin, Wang Yuwei, Wang Guiqiang, Zhang Qingguo
College of New Energy, Bohai University 19, Keji Rd., New Songshan District Jinzhou City Liaoning Province 121013 China
Department of Chemistry and Environmental Sciences Jinzhou Normal College, 189, Songpo Rd., Linghe District Jinzhou City Liaoning Province 121000 China.
RSC Adv. 2019 Feb 18;9(10):5865-5869. doi: 10.1039/c8ra09265f. eCollection 2019 Feb 11.
In this paper, we studied the influence of edge morphology evolution during the chemical vapor deposition cooling process on H etching of graphene domains. Hexagonal graphene domains were synthesized on a Cu substrate and etched with H at atmospheric pressure. After etching, two kinds of graphene edge morphologies were observed, which were closely associated with the cooling process. A visible curvature was observed at the graphene edges an atomic force microscope, indicating that the graphene edges sank into the Cu surface during the cooling process, which protected the graphene edges from etching. This work demonstrates the changes in graphene edges during cooling and sheds light on the etching mechanism of graphene edges on a Cu substrate.
在本文中，我们研究了化学气相沉积冷却过程中边缘形态演变对石墨烯畴H蚀刻的影响。在铜衬底上合成了六边形石墨烯畴，并在大气压下用H进行蚀刻。蚀刻后，观察到两种与冷却过程密切相关的石墨烯边缘形态。在原子力显微镜下，石墨烯边缘出现了明显的曲率，这表明石墨烯边缘在冷却过程中沉入了铜表面，从而保护了石墨烯边缘不被蚀刻。这项工作展示了冷却过程中石墨烯边缘的变化，并揭示了铜衬底上石墨烯边缘的蚀刻机制。
