Molecular Nanofabrication Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands.
Nanoscale. 2010 Aug;2(8):1455-60. doi: 10.1039/c0nr00007h. Epub 2010 May 27.
A new approach for fabricating porous structures on silicon substrates and on polymer surfaces, using colloidal particle arrays with a polymer mask of a highly etch-resistant organometallic polymer, is demonstrated. Monolayers of silica particles, with diameters of 60 nm, 150 nm, 300 nm, or 500 nm, were deposited either on a silicon substrate or on a surface coated with polyethersulfone (PES), and the voids of the arrays were filled with poly(ferrocenylmethylphenylsilane) (PFMPS). Argon ion sputtering removed the excess PFMPS on the particles which enabled removal of the particles with HF. Further pattern transfer steps with reactive ion etching for different time intervals provided structures in silicon or in a PES layer. Free-standing PES membranes exhibiting regular arrays of circular holes with high porosity were fabricated by using cellulose acetate as a sacrificial layer. The pores obtained on silicon substrates after etching were used as molds for nanoimprint lithography (NIL). A combination of the techniques of nanosphere lithography (NSL) and NIL has resulted in 3D nanostructures with a hemispherical shape (inherited from the nanoparticles) which was obtained both in silicon and in PMMA.
一种在硅衬底和聚合物表面上制造多孔结构的新方法，使用具有高度抗蚀刻的有机金属聚合物的聚合物掩模的胶体粒子阵列来演示。直径为 60nm、150nm、300nm 或 500nm 的二氧化硅颗粒单层要么沉积在硅衬底上，要么沉积在涂有聚醚砜（PES）的表面上，并且阵列的空隙用聚（二茂铁基甲基苯基硅烷）（PFMPS）填充。氩离子溅射去除了粒子上多余的 PFMPS，这使得 HF 能够去除粒子。用反应离子刻蚀进行进一步的图案转移步骤，不同时间间隔提供了硅或 PES 层中的结构。通过使用醋酸纤维素作为牺牲层，制造了具有高孔隙率的规则圆形孔阵列的独立 PES 膜。在蚀刻后在硅衬底上获得的孔用作纳米压印光刻（NIL）的模具。纳米球光刻（NSL）和 NIL 技术的组合导致具有半球形形状（从纳米颗粒继承而来）的 3D 纳米结构，这在硅和 PMMA 中都得到了。
