School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, South Korea.
Opt Lett. 2010 Sep 15;35(18):3012-4. doi: 10.1364/OL.35.003012.
We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN-sapphire interface in InGaN/GaN LEDs. A specific SiO(2) mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN-air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20 mA.
我们报告了在 InGaN/GaN 发光二极管中 GaN-蓝宝石界面处周期性取向嵌入式空气突起 (EAP) 结构的发展。采用特定的 SiO2 掩模图案和简单的湿法刻蚀工艺来制造 EAP 结构。由于 GaN-空气界面的高折射率对比度，紧密相邻的空气腔和多量子阱之间的强耦合促进了自发发射。结果，在 20 mA 的注入电流下，EAP LED 的光输出功率比传统 LED 高 2.2 倍。
