Huang Wan-Chun, Lin Chia-Feng, Hsieh Tsung-Han, Chen Sin-Han, Lin Ming-Shiou, Chen Kuei-Ting, Lin Chun-Min, Chen Sy-Hann, Han Pin
Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan.
Opt Express. 2011 Sep 12;19 Suppl 5:A1126-34. doi: 10.1364/OE.19.0A1126.
InGaN light-emitting diode (LED) structures get an air-void structure and a tapered GaN structure at the GaN/sapphire interface through a laser decomposition process and a lateral wet etching process. The light output power of the treated LED structure had a 70% enhancement compared to a conventional LED structure at 20 mA. The intensities and peak wavelengths of the micro-photoluminescence spectra were varied periodically by aligning to the air-void (461.8nm) and the tapered GaN (459.5nm) structures. The slightly peak wavelength blueshift phenomenon of the EL and the PL spectra were caused by a partial compressed strain release at the GaN/sapphire interface when forming the tapered GaN structure. The relative internal quantum efficiency of the treated LED structure (70.3%) was slightly increased compared with a conventional LED (67.8%) caused by the reduction of the piezoelectric field in the InGaN active layer.
通过激光分解工艺和横向湿法蚀刻工艺，氮化铟镓发光二极管（LED）结构在氮化镓/蓝宝石界面处获得了气孔结构和锥形氮化镓结构。与传统LED结构相比，经处理的LED结构在20 mA电流下的光输出功率提高了70%。通过与气孔结构（461.8nm）和锥形氮化镓结构（459.5nm）对齐，微光致发光光谱的强度和峰值波长呈周期性变化。在形成锥形氮化镓结构时，氮化镓/蓝宝石界面处的部分压缩应变释放导致了电致发光（EL）和光致发光（PL）光谱的轻微峰值波长蓝移现象。由于氮化铟镓有源层中压电场的降低，经处理的LED结构的相对内量子效率（70.3%）与传统LED（67.8%）相比略有提高。
